半导体物理与器件课后答案第8章.pdf

Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual Chapter 8 Problem Solutions Chapter 8 Problem Solutions 8.1 HF IKIn the forward bias eV I f ≈ IS exp kT Then FHF IKI NML a fOIf1 PQI f 2 = IS ? exp IS exp eV1 kT eV 2 H KkT e = exp kT V1 ? V2 or FH KI FHG KIJV1 ?V2 = kT e ln I f 1 If2 (a) For I f 1 = 10 ? If2 V1 ? V2 = 59.9 mV ≈ 60 mV (b) For If1 If2 = 100 ? V1 ? V2 = 119.3 mV ≈ 120mV 8.2 L F I OeV MN H K PQI = IS exp kT ?1 FH KIor we can write this as I eV + 1 = exp I S kT so that F I F IkT I H K G JV = ln + 1 H Ke IS In reverse bias, I is negative, so at I = ?0.90 , we have IS V = (0.0259) ln(1 ? 0.90) ? or V = ?59.6 mV 8.3 Computer Plot 8.4 The cross-sectional area is A= I 10 x10 ?3 = = 5x10?4 cm2 J 20 We have FGH KJI HF KIJ ≈ JS exp VD Vt 0.65 ? 20 = JS exp 0.0259 so that JS = 2.52 x10?10 A / cm2 We can write MLNJS = eni2 1 ? Na Dn + 1 ? τ nO N d We want OPDp \ Qτ pO 1 ? Na or 1 ? Na Dn τ nO Dn + 1 ? τ nO N d = 0.10 Dp τ pO 1 25 ? Na 5x10?7 1 25 1 10 ? Na 5x10?7 + N d ? 5x10?7 7.07 x103 b g= 7.07x103 + Na 4.47x103 = 0.10 Nd which yields Na = 14.24 Nd Now b gb gJS = 2.52 x10?10 = 1.6x10?19 1.5x1010 2 L O1 25 1 10 M P× ? N Q(14.24)Nd 5x10?7 + N d ? 5x10?7 We find N d = 7.1x1014 cm?3 and N a = 1.01x1016 cm?3 101 Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual Chapter 8 Problem Solutions 8.5 (a) eDn n pO Jn Jn + Jp = eDn n pO Ln + eDp pnO Ln Lp Dn ? ni2 = τ nO N a Dn ? ni2 + Dp ? ni2 τ nO N a τ pO N d HGF IJK= 1+ 1 Dpτ nO ? Dnτ pO Na Nd We have Dp = μ p = 1 Dn μ n 2.4 so and τ nO = 1 τ pO 0.1 Jn = Jn + Jp 1+ or FGH KJI1 11 ? Na 2.4 0.1 Nd Jn = 1 HGF KJIJn + Jp 1+ (2.04) Na Nd (b) Using Einstein’s relation, we can write eμ n ? ni2 Jn Jn + Jp = eμ n ? Ln N a ni2 + eμ p ? ni2 Ln N a Lp Nd = eμ n N d eμ n N d + Ln Lp ? eμ p Na We have σ n = eμ n Nd and σ p = eμ p Na Also Ln = Lp Then Dnτ nO = Dpτ pO 2.4 = 4.90 0.1 b gJn = σn σp b gJn + J p σ n σ p + 4.90 8.6 For a silicon p+n junction, IS = Aeni2 ? 1 Nd Dp