《半导体光电子学课件》英文原文.docVIP

C ELECTRON-PHONON SCATTERING The electron-phonon scattering determines the intrinsic carrier lifetime. We shall formulate it for a superlattice. The quantum well case can be obtained by taking the limit of infinite barrier thickness. We write electronic states and phonon polarisation vectors of the superlattice in terms of the corresponding bulk states and polarisation vectors. The resulting electron-phonon coupling can also be written in terms of the corresponding bulk electron-phonon coupling constant. A detailed discussion of bulk electron-phonon coupling can be found in [21]. Cl Deformation-potential Mechanism In the rigid-ion model, the electron-phonon interaction due to the deformation of electronic potential caused by the lattice vibration is given by [22] (1) where S labels the superlattice unit cells (SUCs), N is the total number of SUCs in the sample, labels the different ions in an SUC, and denote the mass and position of ion , （） denotes the polarisation vector at position of phonon mode j , and describes the potential for an electron interacting with ion . is the normal mode coordinate of mode j which takes the second quantisation form where denotes the frequency of mode j . We expand the superlattice electronic states (with wave vector k) in terms of bulk Bloch states of the well material, where v labels the bulk bands involved. where the dependence in the bulk states has been kept implicit. Here denotes the z-component of the superlattice reciprocal lattice vector. The matrix element of between two electronic states with wave vectors k and is given by (2) where (3) and where denotes the (cation or anion) component of the polarisation vector at wave vector q for bulk mode v and is total mass per bulk unit cell for the corresponding bulk material. The +(-) sign in the above equation denotes a phonon absorption (emission) process. Note that Dv,v(q) in EQN (3) is just the electron-phonon couplin