Schottky contacts in germanium nanowire network devices synthesized from nickel seeds.pdfVIP

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Schottky contacts in germanium nanowire network devices synthesized from nickel seeds.pdf

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Schottky contacts in germanium nanowire network devices synthesized from nickel seeds.pdf

Physica E 84 (2016) 537–542 Contents lists available at ScienceDirect Physica E journal homepage: /locate/physe Schottky contacts in germanium nanowire network devices synthesized from nickel seeds R.C. Gouveia a,b,n, A.D. Rodrigues c, E.R. Leite d, A.J. Chiquito a a Departamento de Física – Nano Lab, Universidade Federal de S?o Carlos, Rod. Washington Luís, Km 235 - SP 310, S?o Carlos, CEP 13565-905, Brasil b área de Ciências, Instituto Federal de Educa??o Ciência e Tecnologia de S?o Paulo, Rua Américo Ambrósio, 269, Jd. Cana?, Sert?ozinho, CEP14169-263, Brasil c Departamento de Física – Laboratório Raman, Universidade Federal de S?o Carlos, Rod. Washington Luís, Km 235 - SP 310, S?o Carlos, CEP 13565-905, Brasil d Departamento de Química - LIEC, Universidade Federal de S?o Carlos, Rod. Washington Luís, Km 235 - SP 310, S?o Carlos, CEP 13565-905, Brasil HIGHLIGHTS Ge nanowires were grown by VLS method using Ni as catalysts. All nanowires presented reduced diameters and high single crystalline quality. The small size of the nanowires led to phonon localization effect. Temperature dependent Schottky barriers were observed on GeNWs network devices. article info Article history: Received 25 February 2016 Received in revised form 10 June 2016 Accepted 21 June 2016 Available online 22 June 2016 Keywords: Nanostructure Semiconductor Raman spectroscopy Schottky contact abstract This paper presents reliable process to the synthesis of germanium nanowires by the vapor–liquid–solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devi