Short-circuit current improvement in CdTe solar cells by combining a ZnO buffer layer and a solution back contact.pdfVIP

下载本文档

6
0
约3.3万字
约 8页
2017-03-16 发布于天津
举报
版权申诉

Short-circuit current improvement in CdTe solar cells by combining a ZnO buffer layer and a solution back contact.pdf

1、本文档共8页，可阅读全部内容。
2、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
5、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
6、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
7、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
8、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Short-circuit current improvement in CdTe solar cells by combining a ZnO buffer layer and a solution back contact.pdf

Current Applied Physics 17 (2017) 47e54 Contents lists available at ScienceDirect Current Applied Physics journal homepage: /locate/cap Short-circuit current improvement in CdTe solar cells by combining a ZnO buffer layer and a solution back contact Eun Seok Cha, Young Min Ko, Seon Cheol Kim, Byung Tae Ahn* Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea article info Article history: Received 18 August 2016 Received in revised form 18 October 2016 Accepted 20 October 2016 Available online 22 October 2016 Keywords: CdTe solar cells ZnO buffer layer Cu solution contact Short circuit current Quantum ef?ciency abstract Conventional CdTe solar cells have a CdS window layer, in which an absorption loss of photons with more than 2.4 eV occurs through the CdS layer. A thinner CdS layer was applied to enhance light transmission and a ZnO buffer layer with a band gap of 3.3 eV was introduced to suppress shunting through the thinner CdS window layer. A 100-nm thick ZnO layer sputter-deposited at 300 C had uniform coverage on a transparent conductive oxide (TCO) after a subsequent high-temperature process. The ZnO layer was effective in preventing shunting through the CdS window layer so that the open-circuit voltage and ?ll factor of the CdTe solar cells were recovered and the short-circuit current was enhanced over that of the conventional CdTe solar cell. In the ZnO/CdS/CdTe con?guration, the short-circuit current was further improved throughout the visible wavelength region by replacing the Cu-metal contact with a Cu solution contact. As a result the short-circuit current from 21.7 to 26.1 mA/cm2 and the conversion ef?ciency of the CdTe solar cell increased from 12 to 15% without antire?ective coating. Our result indicates that the Cu solution back contact is a critical factor for achieving a higher cell ef?ciency in addition to ZnO buffer layer. ? 2016 Elsevier B.V