Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy Effect of electrical bias.pdfVIP

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Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy Effect of electrical bias.pdf

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Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy Effect of electrical bias.pdf

Solar Energy Materials Solar Cells 161 (2017) 263–269 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: E?ect of electrical bias Paul Narchia,b,?, Vladimir Neplokhc, Valerio Piazzac, Twan Beardad, Fabien Baylec, Martin Foldynab, Chiara Toccafondib, Patricia Prod’hommea, Maria Tchernychevac, Pere Roca i Cabarrocasb a TOTAL New Energies, 24 cours Michelet, 92069 Paris La Défense Cedex, France b LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau, France c Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris Saclay, 91405 Orsay, France d IMEC, Kapeldreef 75, B-3001 Leuven, Belgium MARK ARTICLE INFO Keywords: Interdigitated back contact Heterojunction Solar cells Silicon Kelvin Probe Force Microscopy Scanning Electron Microscopy ABSTRACT Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the e?ect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under di?erent values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microsc