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The ohmic contact between zinc oxide and highly oriented pyrolytic graphite.pdf
Materials Letters 192 (2017) 52–55
Contents lists available at ScienceDirect
Materials Letters
journal homepage: /locate/mlblue
The ohmic contact between zinc oxide and highly oriented pyrolytic graphite
Faramarz Hossein-Babaei ?, Navid Alaei-Sheini, Mojtaba Jahangiri
Electronic Materials Laboratory, Electrical Engineering Department, K. N. Toosi University of Technology, Tehran 16317-14191, Iran
article info
Article history: Received 27 November 2016 Received in revised form 14 January 2017 Accepted 18 January 2017 Available online 20 January 2017
Keywords: Carbon materials Semiconductors Contacts Electrical properties Zinc oxide Highly oriented pyrolytic graphite
abstract
Contacts between highly oriented pyrolytic graphite (HOPG) and graphene with many important semiconductors, including silicon, are of Schottky type with signi?cant junction energy barrier heights. Here, we show that the junction between the transparent oxide semiconductor ZnO and HOPG is ohmic in nature, but the oxygen species adsorbed to the HOPG surface at the junction cause an electron energy barrier buildup and render the device current vs. voltage characteristics rectifying. Upon a brief heat treatment in vacuum, these devices demonstrate their intrinsic ohmicity. The presented model describes the obtained experimental data and clari?es the important role of the oxygen adsorption in determining the quality of the graphene/semiconductor electrical contacts.
ó 2017 Elsevier B.V. All rights reserved.
1. Introduction
Research on the electrical properties of the junctions of carbon materials with various semiconductors is intense [1]. Contact potential barriers formed at graphene junctions with Si, SiC and a number of III-V semiconductors have been shown to be signi?cant, rendering their current vs. voltage (I-V) characteristics rectifying diode-like [2,3]. The contact potentials formed at the junction between the highly oriented pyrolytic graphite (HOPG) and the mentioned semiconductors have als
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