Understanding the dependence of the ohmic drain-source leakage current on gold deposition rate in top-contact pentacene-based thin film transistors.pdfVIP
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Understanding the dependence of the ohmic drain-source leakage current on gold deposition rate in top-contact pentacene-based thin film transistors.pdf
Microelectronic Engineering 162 (2016) 96–99
Contents lists available at ScienceDirect
Microelectronic Engineering
journal homepage: /locate/mee
Accelerated publication
Understanding the dependence of the ohmic drain-source leakage current on gold deposition rate in top-contact pentacene-based thin ?lm transistors
Wenjie Qin ?, Holger Goebel
Department of Electronics, Helmut Schmidt University/University of the Federal Armed Forces, Holstenhofweg 85, D-22043 Hamburg, Germany
article info
Article history: Received 15 March 2016 Received in revised form 29 April 2016 Accepted 14 May 2016 Available online 15 May 2016
Keywords: Ohmic leakage current Gold deposition rate Top-contact thin ?lm transistors Lateral diffusion Gold clusters
abstract
We studied the in?uence of the gold deposition rate on the drain-source leakage current of top-contact pentacene-based thin ?lm transistors (TFTs) with different channel lengths. It is demonstrated that the anomalous leakage current which occurs only in short-channel TFTs monotonically increases with increasing the gold deposition rate. For TFTs with channel length of 30 μm, we also investigated the dependence of the drain-source leakage current on the pentacene grain size as well as the gold deposition rate. It is shown that the pentacene grain size in?uences the leakage current only in the case if high gold deposition rate is employed, whereas the anomalous leakage current can be avoided by reducing the gold deposition rate. Finally, due to the observed ohmic character of the anomalous leakage current, we propose that the origin of the current can be attributed to parasitic leakage paths on the surface of the pentacene layers formed by the lateral diffusion of gold clusters from drain/source edges into the channel region during gold deposition. Based on this hypothesis, the observed dependence of the anomalous leakage current on the gold deposition rate can be well explained.
? 2016 Elsevier B.V. All rights reserved.
1. Introduct
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