BT139B-600E,118;BT139B-800E,118;中文规格书,Datasheet资料.pdfVIP

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BT139B-600E,118;BT139B-800E,118;中文规格书,Datasheet资料.pdf

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BT139B-600E,118;BT139B-800E,118;中文规格书,Datasheet资料

http1. Product profile 1.1 General description Passivated, sensitive gate triacs in a SOT404 SMD plastic package. 1.2 Features■ High sensitivity in all four quadrants. 1.3 Applications 1.4 Quick reference data 2. Pinning information BT139B series E Triacs; sensitive gate Rev. 03 — 23 September 2004 Product data sheet ■ General purpose bidirectional switching ■ Phase control. ■ VDRM ≤ 600 V (BT139B-600E) ■ ITSM ≤ 155 A■ VDRM ≤ 800 V (BT139B-800E) ■ IGT ≤ 10 mA (T2+ G+; T2+ G?; T2? G?)■ IT(RMS) ≤ 16 A ■ IGT ≤ 25 mA (T2? G+). Table 1: Pinning Pin Description Simplified outline Symbol 1 main terminal 1 (T1) SOT404 (D 2 -PAK) 2 main terminal 2 (T2) 3 gate (G) mb mounting base, connected to main terminal 2 (T2) 1 3 2 mb sym051 T1 G T2:/// Philips Semiconductors BT139B series E Triacs; sensitive gate http3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. Table 2: Ordering information Type number Package Name Description Version BT139B-600E - plastic single-ended surface mounted package (Philips version of D 2 -PAK); 3 leads (one lead cropped) SOT404 BT139B-800E Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BT139B-600E [1] - 600 V BT139B-800E - 800 V IT(RMS) RMS on-state current full sinewave; Tmb ≤ 99 °C; Figure 4 and Figure 5 - 16 A ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; Figure 2 and Figure 3 t = 20 ms - 155 A t = 16.7 ms - 170 A I 2 t I 2 t for fusing t = 10 ms - 120 A 2 s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/μs T2+ G+ - 50 A/μs T2+ G? - 50 A/μs T2? G? - 50 A/μs T2? G+ - 10 A/μs IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power -