DSSK48-003BS;DSSK48-003BS-TUBE;中文规格书,Datasheet资料.pdfVIP

DSSK48-003BS Schottky Diode Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 300 I A VF 0.44 R 1.20 K/W VR = 1 2 3 min. 25 t = 10 ms Applications: VRRM V30 20TVJV °C= TVJ °C= mA60 Package: Part number VR = TVJ = °CIF = A V TC = 130°Cd = Ptot 105 WTC °C= TVJ 150 °C-55 V I RRM = = 30 25 20 TVJ = 45°C DSSK48-003BS V A 30 V30 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 0.54 TVJ °C= 25 CJ junction capacitance V = V;5 T 100 VF0 V0.19TVJ = 150°C rF 6.8 Ω f = 1 MHz = °C25 m V0.35TVJ = °CIF = A V 20 0.48 IF = A40 IF = A40 2x threshold voltage slope resistance for power loss calculation only Backside: cathode (50 Hz), sine VF = 0.35 V ● Housing: High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode TO-263 (D2Pak) ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant R VJ mA 1.77 nF thermal resistance junction to casethJC rectangular 0.5 ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions.Data according to IEC 60747and per diode unless otherwise specified ? 2010 IXYS all rights reserved / DSSK48-003BS IRMS Aper pin 35 R thCH K/W0.25 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. FC