KRVV1210H470NXT.pdfVIP

GRACE SMD Multilayer chip Varistor PART NO. KRVV1210G470NXT 0755 1.1 Technical Data Symbol Value Unit Maximum allowable continuous AC voltage*1 VRMS 30.0 V Maximum allowable continuous DC voltage VDC 38.0 V Varistor voltage Measured*2 VB 47.0 V Varistor voltage tolerance 10 % Typical capacitance value measured*3 C 1000 pF Typical capacitance value tolerance 30 % Maximum clamping voltage measured*4 VC 78 V Surge Voltage (10/700μs) KV 4 KV Maximum Peak Current (8/20μs) I P 400 A 1.2 Reference Data Maximum Energy Absorption 10/1000μs F 1.4 J Response time T rise 1 ns Leakage current at VB×80%(At initial state) ILVB 50 μΑ Leakage current at VB×80%(After reliability Test) ILVBA 200 μΑ Operating ambient temperature -55~+125 ℃ Storage temperature -55~+150 ℃ Reflow temperature profile(Recommend) 260 ℃ 1.3 Other Data Body Nano Special End termination Ag/Sn Lead Content ≤ 1000 ppm Packaging Bulk/Tape Complies with Standard IEC61000-4-5, ITU-T K20, K21 1.4 Notes: 1 The breakdown voltage was measured at 1 mA current. 2 The Clamping voltage was measured at 8/20 |μs standard current, 1210(2.5A). 3 The surge current was tested at 10/700 μs waveform, Ri=40 ohm. Common-mode testing is to test all data lines while the GND. 4 The capacitance value only for customer reference, its not formal specification. 5 The components shall be employed within 1 year, in the nitrogen condition. 1.5 Features of SHN Series 1. RoHS compliant 2. SMD type Body size 1210 3. Meet IEC61000-4-5 / K21 Standard 4. Bidirec tional and symmetrical V/I characteristics 5. Large withstanding surge current capability 4KV (@10/700) 6. Excellent low leakage current 10μA 7. Operating temperature range -55