MRF372R5;MRF372R3;中文规格书,Datasheet资料.pdfVIP

A R C H IV E IN F O R M A T IO N A R C H IV E IN F O R M A T IO N MRF372R3 MRF372R5 1 RF Device Data Freescale Semiconductor RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 32 volt transmitter equipment. ? Typical Narrowband Two--Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 17 dB Efficiency — 36% IMD — --35 dBc ? Typical Broadband Two--Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 14.5 dB Efficiency — 37% IMD — --31 dBc ? Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output Power Features ? Internally Matched for Ease of Use ? Integrated ESD Protection ? Excellent Thermal Stability ? Characterized with Series Equivalent Large--Signal Impedance Parameters ? RoHS Compliant ? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Drain Current -- Continuous ID 17 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 350 2.0 W W/°C Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.5 °C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Document Number: MRF372 Rev. 9, 5/2006 Freescale Semiconductor Technical Data 470--860 MHz, 180 W, 32 V LATERAL N--CHANNEL RF POWER MOSFET CASE 375G--04, STYLE 1 NI--860C3 MRF372R3 MRF372R5 ? Freescale Semiconductor, Inc., 2006