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材料表征教学资料 Material characterization-FIB_151211.pdfVIP

材料表征教学资料 Material characterization-FIB_151211.pdf

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Sample preparation and analysis Lithography Focused ion beam (FIB) Material characterization-材料表征 芦红 Tel: Email: hlu@ 12/11/15 Making nanostructures: Top down Approach ?? Photolithography ?? Electron beam lithography ?? Micromechanical structures ?? Thin films, e.g. MBE ?? Self-assembled masks ?? Focused ion beam milling ?? Stamp technology ?? … Photolithography Ex. PPMA Ex. HF 3 ?? Oxidation: place a protective layer (100-2000 nm) on the surface ?? Masking: features are open in the layer window by light ?? Implantation: doping step of the exposed sites ?? Etching: remove the protective layer ?? Metalization: contacting by metal deposition ?? Lift-off: complement of etching. Deposition of layers on a patterned photoresist 4 NA r 2 λ = Photolithography with micron-scale resolution is a useful precursor tool for generating nanostructures by other methods. Optical lenses resolution: 0.5 μ Current top resolution of photolithography: ≈ 50 nm Numerical Aperture of the optical lens Incident wavelength Resolution 5 Evolution of Electronics Bell Labs First Transistor 1959 Texas Instrs. First Integrated Circuit (Intel) 1947 65 nm 14 nm 2014 2005 6 Excimer Laser Stepper 248-157 nm (Reprinted with permission of ASML Corporate Communications) Stepper Motor: Scanning the wafer with nanometer scale accuracy 7 Electronics made by Lithography (Reprinted with permission John Wiley and Sons) Diffusion through holes /masking/metal coating 8 E-beam Lithography The E-beam is turned on/off and directed in a pre- arranged pattern over the surface of the resist. 9 10 Monte Carlo simulation of spatially distributed beams in electron-beam lithography, D.F. Keyser, N.S. Viswanathan, J. Vac. Sci. Technol. Vol. 12, 1975 The resolution is limited by the scattering of secondary electrons, that cause damage of the photoresist even at energies as low as a few eVs. 10 kV 20 kV 11 Micro-electro-mech

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