irfi4212h-117p.pdfVIP

1 08/21/06

    IRFI4212H-117P Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D audio amplifier applications
Low R DS(ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 150W per channel into 4? load in half-bridge configuration amplifier
Lead-free package Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings
Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation  W PD @TC = 100°C Power Dissipation  Linear Derating Factor W/°C EAS Single Pulse Avalanche Energy mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance
Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 7.1 °C/W RθJA Junction-to-Ambient (free air) ––– 65 18 7.0 0.14 10lbin (1.1Nm) -55 to + 150 300 41 Max. 6.8 44 ±20 100 11 VDS 100 V RDS(ON) typ. @ 10V 58 m
Qg typ. 12 nC Qsw typ. 6.9 nC RG(int) typ. 3.4 ? TJ max 150 °C Key Parameters
G1, G2 D1, D2 S1, S2 Gate Drain Source TO-220 Full-Pak 5 PIN
 2

 S D G
 
R