EFFECTS OF DEPOSITION PARAME TERS AND OXYGEN ADDITION ON PROPERTIES OF SPUTTERED INDIUM TIN OXIDE FILMS.docVIP

MAKARA, TEKNOLOGI, VOL. 16, NO. 2, NOVEMBER 2012: 103-108 103 EFFECTS OF DEPOSITION PARAMETERS AND OXYGEN ADDITION ON PROPERTIES OF SPUTTERED INDIUM TIN OXIDE FILMS Badrul Munir , Rachmat Adhi Wibowo , and Kim Kyoo Ho2 1*) 2 1. Department of Metallurgy and Materials Engineering, Universitas Indonesia, Depok 16424, Indonesia 2. School of Materials Science and Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan 712-749, Republic of Korea *) E-mail: bmunir@ui.ac.id Abstract Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10 ??cm -4 was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. Abstrak Efek Parameter Deposisi dan Penambahan Oksigen terhadap Sifat-sifat Lapisan Tipis Indium Timah Oksida Hasil Sputtering. Lapisan tipis indium timah oksida (ITO) dideposisikan pada substrat gelas corning dengan metode sputtering menggunakan gas argon. Parameter deposisi dan penambahan oksigen dalam gas sputtering dioptimasi untuk mendapatkan tingkat transparansi lapisan tertinggi dan resistivitas listrik terendah melalui pengamatan struktur, sifat listrik dan sifat optik. Peningkatan laju deposisi dan ketebalan lapisan menghasilkan perubahan orientasi kristalografi