Two-Dimensional Analytical Modeling Of Threshold Voltage Of Doped Short-Channel Triple-Material Double-Gate (TM-DG) MOSFET’S 英文论文文献.docVIP

J. Nano- Electron. Phys. 3 (2011) No1, P. 576-583 ? 2011 SumDU (Sumy State University) PACS numbers: 85.30.De, 85.30.Tv TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGE OF DOPED SHORT-CHANNEL TRIPLE-MATERIAL DOUBLE- GATE (TM-DG) MOSFET’S Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, India E-mail: sjit.ece@itbhu.ac.in In this paper, a short-channel threshold voltage model is presented for triple-material double-gate(TM-DG) MOSFET with uniform doping profile in the