Control Effect of Nanometer SiO2 Hydrosol on Alloy Impurity in CMP Process of ULSI英文文献资料.docVIP

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Control Effect of Nanometer SiO2 Hydrosol on Alloy Impurity in CMP Process of ULSI英文文献资料.doc

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Control Effect of Nanometer SiO2 Hydrosol on Alloy Impurity in CMP Process of ULSI英文文献资料

HindawiPublishingCorporation JournalofNanomaterials Volume2006,ArticleID29139,Pages1–2 DOI10.1155/JNM/2006/29139 ControlEffectofNanometerSiO2Hydrosolon AlloyImpurityinCMPProcessofULSI LiuYuling,LiWeiwei,ZhangXihui,andLiuChangyu SchoolofInformationandEngineering,HebeiUniversityofTechnology,8GuangrongRoad,HongqiaoDistrict, Tianjin300130,China Received26December2005;Accepted12November2006 This article analyzed and studied the concentration mechanism of metal impurities of ULSI multilayered wiring CMP in the special-purpose nanometer SiO2 grinding compound in the substrate chip surface and the process of puri?cation with chelatingagent;wealsoobtainedtheremarkablee?ectandthee?ectiveapplicationinthemicroelectroncomponentprepara- tion. Copyright?2006LiuYulingetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. 1. INTRODUCTION 2. EXPERIMENT 2.1. Experimentofmetalimpurityadsorptionon ULSIsubstrate With the development of microelectronic technology, the characteristicsizeenteredthe65nmandwiringlayeralready achievedaboveten,inthereallylarge-scaleintegratedcircuit (ULSI).Eachlayerhastocarry onglobleplanarizationfor photoetchinge?ectandproductrate.Theonlybestmethod ofplanarizationischemicalmechanicplanarization(CMP) [1–4],whosemechanicale?ectsdependonsome?xedfac- torssuchaspolishingpad,rotaryspeed,andpolishingpres- sure.Thekeyistheabrasiveinpolishingprocess;SiO2col- loid is the best abrasive among existing abrasives because of its high puri?cation and broad appliance. The increas- ing sensitivity of devices is a?ected by the metal impuri- tiesthatwouldcausebigleakageelectriccurrent,lowpen- etration,softpenetration,reliabilitydeterioration,andun- desirable in?uence. It has suppressed the development of microelectronictechnologyandthewidespreadapplication. Therefore,toobtainthehighperformancedevices,thesu- per?cial impurity must fall below