Selective Detection of NO2 Using Cr-Doped CuO Nanorods 英文参考文献.docVIP

Selective Detection of NO2 Using Cr-Doped CuO Nanorods 英文参考文献.doc

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Selective Detection of NO2 Using Cr-Doped CuO Nanorods 英文参考文献

Sensors 2012, 12, 8013-8025; doi:10.3390/s120608013 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Selective Detection of NO2 Using Cr-Doped CuO Nanorods Kang-Min Kim, Hyun-Mook Jeong, Hae-Ryong Kim, Kwon-Il Choi, Hyo-Joong Kim and Jong-Heun Lee * Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea; E-Mails: mackjan@korea.ac.kr (K.-M.K.); hyonez@ (H.-M.J.); kimryong@ (H.-R.K.); saaryun@korea.ac.kr (K.-I.C.); yoarin@korea.ac.kr (H.-J.K.) * Author to whom correspondence should be addressed; E-Mail: jongheun@korea.ac.kr; Tel.: +82-2-3290-3282; Fax: +82-2-928-3584. Received: 24 April 2012; in revised form: 18 May 2012 / Accepted: 1 June 2012 / Published: 11 June 2012 Abstract: CuO nanosheets, Cr-doped CuO nanosheets, and Cr-doped CuO nanorods were prepared by heating a slurry containing Cu-hydroxide/Cr-hydroxide. Their responses to 100 ppm NO2, C2H5OH, NH3, trimethylamine, C3H8, and CO were measured. For 2.2 at% Cr-doped CuO nanorods, the response (Ra/Rg, Ra: resistance in air, Rg: resistance in gas) to 100 ppm NO2 was 134.2 at 250 °C, which was significantly higher than that of pure CuO nano-sheets (Ra/Rg = 7.5) and 0.76 at% Cr-doped CuO nanosheets (Ra/Rg = 19.9). In addition, the sensitivity for NO2 was also markedly enhanced by Cr doping. Highly sensitive and selective detection of NO2 in 2.2 at% Cr-doped CuO nanorods is explained in relation to Cr-doping induced changes in donor density, morphology, and catalytic effects. Keywords: CuO; Cr2O3; p-type; gas sensor; nanostructures; nanosheets; nanorods 1. Introduction Oxide semiconductors have been used to detect oxidizing and reducing gases in a simple and cost-effective manner [1–3]. Their chemiresistive variation emanates from the oxidative or reductive interaction of the analyte gas with the oxide semiconductor surface and the consequent change in the charge carrier concentration. In n-type oxide

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