Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface 英文参考文献.docVIP

Sensors 2003, 3, 504-508 sensors ISSN 1424-8220 ? 2003 by MDPI /sensors Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface Ludmila A. Obvintseva, Fatima Kh. Chibirova*, Serge A. Kazakov, Alexander K. Avetisov, Marina V. Strobkova and Nataliya V. Finogenova Karpov Research Institute For Physical Chemistry, Russia 105064, Moscow, ul. Vorontsovo Pole, 10. Tel. (095) 735-65-57, Fax. (095) 437-28-10, * Author to whom correspondence should be addressed : chibir@cc.nifhi.ac.ru Received: 1 May 2003 / Accepted: 5 October 2003 / Published: 5 December 2003 Abstract: In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS), which allowed evaluating heterogeneous death-rate of ozone (γ) Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb). Keywords: semiconductor sensors, heterogeneous death-rate of ozone, Teflon Introduction Both environmental problems, connected to ozone, and its wide implementation in chemical technological processes cause significant interest to ozone behaviour under various conditions [1]. As a consequence, the demand arises for measurements techniques of low ozone concentrations (1–100 ppb) in the ambient air. This concentration range includes the variations of ozone concentrations during a day, and also Ambient Air Standard for ozone (AAS), (50 ppb). Only high precision techniques provide measurements of such concentration ranges, but the risk exists of the distortion of the measured concentration values caused