Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System 英文参考文献.docVIP

Sensors 2010, 10, 10413-10434; doi:10.3390/s101110413 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System Mario Alfredo Reyes Barranca *, Salvador Mendoza-Acevedo, Luis M. Flores-Nava, Alejandro Avila-García, E. N. Vazquez-Acosta, José Antonio Moreno-Cadenas and Gaspar Casados-Cruz CINVESTAV-IPN, Electrical Engineering Department, Av. IPN No. 2508, Col. San Pedro Zacatenco, Mexico, D.F. 07360, Mexico; E-Mails: smendoza@cinvestav.mx (S.M.-A.); lmflores@cinvestav.mx (L.M.F.-N.); aavila@cinvestav.mx (A.A.-G.); neo_wolfx@ (E.N.V.-A.); jmoreno@cinvestav.mx (J.A.M.C.); gcasados@solar.cinvestav.mx (G.C.-C.) * Author to whom correspondence should be addressed; E-Mail: mreyes@cinvestav.mx; Tel.: +52-55-5747-3776; Fax: +52-55-5747-3978. Received: 30 September 2010; in revised form: 28 October 2010 / Accepted: 10 November 2010 / Published: 18 November 2010 Abstract: Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation p