非易失铁电存储器的进展与若干问题.pdf

[ 4 ] Zory P S. Quantum Well Lasers. London Academic Press : [ 8 ] Shtengel G, Temkin H. Appl. Phys. Lett. , 1994 , 64 : 1993. 73 —78 ,198 —203 1062 —1064 [ 5 ] 郑厚植. 半导体学报 ,1997 ,18 :481 —491 [ 9 ] Yamanishi M. Prog. Quant. Electron. 1995 ,19 :1 —39 [ 6 ] Yorkoyama H ,Nishi K ,Anan T et al . Opt. Quantum [ 10 ] Deppe D G, Huffaker D L . OPN Optics Photonics Electron. ,1992 ,24 :S245 —S272 News ,1998 ,9 ( 1) :30 —33 [ 7 ] 章　蓓. 物理 ,1996 ,25 :652 —658 非易失铁电存储器的进展和若干问题 罗 　维 　根 ( 中国科学院上海硅酸盐研究所,上海　200050) 摘 　要 　　铁电薄膜与半导体集成 ,产生了新一代非易失存储器. 它的功耗之小 ,写入速度之快 ,可重写 次数之多以及抗辐照能力之强是目前任何一种半导体存储器所不及的. 文章介绍了非易失铁电存储器 的原理、特点、进展和应用 ,并讨论了这类存储器在进入大规模商业生产时所面临的若干材料、工艺和器 件失效等问题. 关键词 　　铁电薄膜 ,铁电随机存取存储器 ,非易失存储器 NON VOLATIL E FERROEL ECTRIC MEMORY AND RELATED ISSUES Luo Weigen ( S hanghai Instit ute of Ceramics , The Chinese Academy of Sciences , S hanghai 　200050) Abstract 　　The combination of ferroelectric thin films with integrated semiconductor chips has cre ated a new generation of non - volatile memories. They are superior to all traditional non - volatile memories in their low power consumption , high writing speed , high writing cycle endurance and strong anti - radiation properties. This paper describes the principle ,characteristics ,development and applications of non - volatile ferroelectric memories Related issues pertaining to ferroelectric thin films ,processing technologies and device degradation should be solved before embarking on commer cial production. Key words 　　ferroelectric thin film , ferroelectric random access memory , non - volatile memory