半导体量子器件物理讲座第三讲异质结双极晶体管_HBT_.pdfVIP

　 半导体量子器件物理讲座 ＊ 　(HBT) 王　良　臣 (　　100083) 　　　(HBT) ., ., HBT . HBT 、. 　　, HETEROJUNCTION BIPOLAR TRANSISTORS WANG Liang-Chen (Instituteof Semiconductors, Chinese Academy of Sciences, Beijing 　100083, China) Abstract　　The differences between the material structural parameters f a h m juncti n bip lar transist r and th se f a heter juncti n bip lar transist r (HBT)are discussed briefly .It is sh wn that d ping design f r the device′s material structure has ev lved int band engineering design.In c mparis n t a h m juncti n bip lar transist r, the HBT ffers superi r perf rmance.The principle f perati n, typical material structures and HBT fabricati n pr cedures will be de- scribed. Key words 　　HBT, band engineering design .(HBT) 1　 f T , , . , , 1951, Sch kley . [1] .1957 , H.Kr emer , 2　 [2] [3] .1972 , Dumke AlGaAs GaAs . ( (MBE), 1978 )p-n , Bell MBE AlGaAs GaAs ., 1980 MBE Al- .p-n E、B GaAs GaAs ., C.p-n-p n-p-n , 1. 3 : . 、, 2 .3 , , . , , , p-n-p , , , , ＊　2000-06-20 , 2000-11-24 ·372 ·