MOCVD法生长ZnO晶体薄膜及p型掺杂研究.pdf

浙江大学硅材料国家莺点实验室 2005年6月 cm-3，电阻率仅为3．02f2cm。 膜，其空穴浓度为1．97×1018 4、采用Hall测试仪反复测量已制得的P型ZnO薄膜的导电性能，大部分样 品在放置4个月后仍然显示为P型，说明本实验沉积的P型ZnO薄膜较为稳定。 5、退火热处理发现：高温退火可提高薄膜的晶体质量，500℃为最优的退 火温度；短时间高温热退火有助于激活N受主，使薄膜发生P型转变。 2 浙江大学硅材料国家重点实验室 2005年6月 ABSTRACT Oxideisasemiconductormaterialthathas Zinc many ZnOisusedinacousticwave acoustic devices(SAW)，bulk electrodesandSO sensors，varistors，and on．Compared、vitllGaN，the transparent at has mostsuccessfulwide-bandsemiconductormaterial ZnO presenL many ZnOwitll lowdefectdensitiescallbe very promisingadvantages：high-quality at low has excitonic temperature；ZnO synthesizedrelatively large bindingenergy at fromboundexcitonic (60mevRD，whichpfomisesstrongphotoluminescence has emissionsatroom beenconsideredasa temperature．Furthermore，it prime candidateforultraviolet diodesandlasers． lightemitting has failedtolivetoits ithas However,ZnO up potential，because largely proved toodifficllltto ZnOdue high-conductivityp-type by pr