利用内掺杂磷及雷射热退火技术达成高电子浓度及-国家奈米元件实验室.PDF

1 02 H i g h E l e c t r i c a l l y A c t i v e P h o s p h o r u s Concentration and Low Contact Resistance of Ge on Si by in-situ Doping and Laser Annealing 1 1 1,2 1 2 2x1020 cm-3 0.32% 5.4x10-8 -cm2 n+-Ge/p-Si 1.6 5 1x10 Abstract Characteristics of heavily phosphorus-doped epi-Ge and different activation process have been demonstrated. High electrically active phosphorus concentration of 2x1020 cm -3, high tensile strain of 0.32% and low specific contact resistivity of 5.4x10-8 -cm 2 are achieved by laser annealing. In addition, n + -Ge/p-Si heterojunction diode was fabricated with ideality factor of 1.6 and 1x105 on/off ratio. Keywords Epitaxy Heavilty Phosphorus-doped Contact Resistivity NANO COMMUNICATION 22 No. 3 03 700 (in-situ annealing) (As- grown) Oxford 700 (RTA) n