新颖低温缺陷钝化技术於前瞻系统面板关键元件之应用与研究.PDF

劉 立 論 裡 了數 料臨 流 理利 度 7 奈了 了 度 150°C臨 流 了臨 流 度 離 X 來 料 量度 7 奈3 漏 流2×10-7 A/cm2 24 理量 度 利 不 流降度 臨 流 理漏 流 度 臨臨 率都 臨 流度 臨 流 度 若臨 流數 料 i Application of Novel Low Temperature Trap-Passivation Technology for System on Panel StudentPo-Yu Yang Advisor Dr. Po-Tsun Liu Department of Photonics and Display Institute National Chiao Tung University Abstract In this study, supercritical fluids (SCF) technology is employed originally to effectively improve the properties of low-temperature-deposited metal oxide dielectric films. In this work, 7 nm ultra-thin Hafnium Oxide (HfO ) films are fabricated by 2 sputtering method at room temperature, and replacing the conventional high temperature annealing with supercritical fluids treatment at 150 °C. The supercritical fluids act a transporter to deliver H O molecule into the HfO films for repairing 2 2 defect states. After this proposed process, the absorption peaks of Hf-O-Hf bonding apparently raise and the quantity of oxygen in HfO2 film increases from FTIR and TDS measurement, individually. The leakage current density of 7 nm HfO film is cut