矽锗奈米线与矽锗异质介面结构奈米线电子显微镜分析 - 国家奈米元件 .pdfVIP

NANO COMMUNICATION 21 No. 2 29 Electron Microscopy Analysis of SiGe Alloy Nanowires and SiGe/Si Axial Heterojunction Nanowire Structures Abstract Silicon (Si) and germanium (Ge) nanowires are potential candidates for future applications in semiconductor device. SiGe alloy nanowires also exhibit excellent transport properties for thermoelectric applications. In order to realize these applications, controlling the morphology, growth direction, number density, and interior composition distribution are very important. In this study, we grow Si nanowires, SiGe alloy nanowires, and SiGe/Si heterojunction nanowires via the vapor-liquid-solid mechanism (VLS) in a chemical vapor deposition (CVD) reactor. The morphology, Si/Ge composition ratio, and the epitaxial relations of the nanowires with the substrates are discussed based on the experimental results from scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). 30 Keywords Silicon Germanium Nanowire Growth Vapor-liquid-solid Mechanism Electron Microscopy Heterojunction Structure