金属掺杂多孔硅薄膜的制备及荧光光谱研究.pdfVIP

西 北 师 范 大 学 学 报 (自然科学版) 第43卷 2007年第 6期 38 Journal of Northwest Normal University(Natural Science) Vo1．43 2007 No．6 金属掺杂多孔硅薄膜的制备及荧光光谱研究 孙小菁，马书懿 ，魏晋军，徐小丽 (西北师范大学 物理与电子工程学院，甘肃 兰州 730070) 摘 要：用电化学方法对多孔硅薄膜进行了金属掺杂．用荧光分光光度计分析了样品的光致发光特性，结果表明，适 量的金属掺杂增强了多孔硅的红光发射，氧化性金属掺杂还增强了多孔硅的蓝光发射，还原性金属掺杂却无此现象． 红外吸收谱表明，金属掺杂多孔硅后si一()一si键振动增强．XRD谱表明，氧化性金属掺杂后多孔硅的无定形程度增 强．对分析结果的解释为；红光增强是金属掺杂引入新的缺陷和硅、氧、金属间新的键态Si—Metal，Metal一0， Metal— Metal所致，而蓝光增强是无定形程度增强，应力增大和进一步氧化所致． 关键词：金属掺杂多孔硅；电化学；光致发光；X射线衍射；红外吸收 中圈分类号：0 469；TB 383 文献标识码：A 文章编号：1001-988 X(2007)06—0038—04 Study on fabrication and fluorescent property of metal—doped porous silicon SUN Xiao—jing。MA Shu—yi。WEI Jin—jun。XU Xiao—li (College of Physics and Electronic Engineering，Northwest Normal University，Lanzhou 730070，Gansu，China) Abstract：Different metal ions are embedded into porous silicon films by electrochemical method． Fluorescence photo—spectrometer is used to investigate the photoluminescence properties of the samples． The red emission of porous silicon is enhanced after metal ions’doping．The blue emission of porous silicon is enhanced after the doping treatment by oxidative metal ions，however，the phenomenon can be negligible in the case of the doping by reductive metal ions．The FTIR results show that the Si—o—Si absorption peak is enhanced． The XRD shows that oxidative metal—doped porous silicon has a more disordered structure． The enhancement of red light emission iS associated with the introduction of new defects and the formation of new Si--Metal。Metal一0。Metal--Metal bonds，the blue light emission enhancement is associated with the more disordered structure，higher strain in the films and also a higher level of oxidation． Key words：metal—doped porous silicon；electrochemistry；photoluminescence；XRD；FT