半导体量子点中杂质结合能的理论研究 - Journal of Northeastern.PDF

第32 卷第8期 东 北 大 学 学 报 ( 自 然 科 学 版 ) Vol132, No. 8 2 0 1 1 年 8 月 Journal of Northeastern U niversity( Natural S ien e) Aug. 2 0 1 1 魏国柱, 李 媛, 公卫江, 范 爽 ( , 110819) : , , , ; # , ; z , # : ; ; ; ; ; : O 471. 1 : A : 1005-3026( 20 11) 08- 1210-03 Theoretical Study on the Binding Energy of Hydrogenic Impurities in a Semiconductor Quantum Dot WEI Guo-z hu, LI Yuan, G ON G Wei-j iang , FAN Shuang ( S hool of S ien es, Northeastern University, Shenyang 110819, China. Corresponding author : WEI Guo-zhu, professor, E-mail: guozhuwei02 @ sina. om) Abstract: The binding energy of hydrogeni impurities in a ylindri al quantum dot was al ulated with the one-dimensional finite-differen e method. The effe ts of the ele tri field, magneti field and position of an impurity on the binding energy w ere studied. When the impurity is lo ated at the enter of the quantum dot, the binding energy de reases w ith in reasing ele tri field and effe tive radius, and when the impurity is lo ated at the plane normal to the z ax is and through the enter of the quantum dot, the binding energy hanges symmetri ally w ith in reasing distan e aw ay from the enter of the quantum dot . However, w hen the impurity is lo ated on the z ax is, the symmetry vanishes be ause of the effe t of the ele tri field. Key words: quantum dot; hydrogeni impurity; ele tri field; magneti field; binding energy ; finite-differen e method , # , [ 10- 11] , # [ 1] [ 12] ,