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J Mater Sci: Mater Electron (2009) 20:418–424
DOI 10.1007/s10854-008-9745-7
Effect of cooling rate on electrical properties, impulse surge
and dc-accelerated aging behaviors of ZPCCD-based varistors
Choon-Woo Nahm
Received: 26 January 2008 / Accepted: 13 May 2008 / Published online: 5 June 2008
Springer Science+Business Media, LLC 2008
Abstract The effect of cooling rate on nonlinear elec- which provide p–n junction semiconductor characteristics.
trical properties, and stability against impulse surge and The basic conduction mechanism of the varistors results
dc-accelerated aging stress of ZPCCD-based varistors was from semiconductor junctions at the grain boundaries
investigated. The cooling rate relatively slightly affects the of zinc oxide grains. The varistors are a multi-junction
microstructure, whereas it did not significantly modify the device with a number of grains acting as a series-parallel
densification process. The nonlinear coefficient increased combination between the electrical terminals. ZnO varis-
with the increase of cooling rate up to 240 C/h, whereas tors exhibit highly nonlinear conduction characteristics. In
the further fast cooling rate caused it to decrease. The other words, ZnO varistors act as an insulator below the
samples cooled at 240 C/h exhibited the highest nonlin- breakdown field, and a conductor thereafter. The varistors
earity, in which the nonlinear coefficient is 61.6 and the has been extensively used in the field of circuit over-
leakage current density is 6.8 lA/cm2. The aging was not voltage protection, with application ranging from a few
significantly affected by the specified impulse surge stress, volts in electronic circuits to millions of volts in electric
whereas it was greatly affe
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