电子传输层中掺杂Ir_ppy_3改善白光OLED的效率.pdfVIP

第28卷　第3期 ol.28,No.3 　　　　　　　　 2008 年9 月 RESEARCH PROGRESS OF SSE Sep., 2008 ( )3 Ir ppy OLED 丁桂英　姜文龙 　汪　津　王立忠　王　静　常　喜 ( , , , 136000) 2007-11-26 , 2008-01-09 : , ITO/NPBX ( 40nm) /rubrene ( 0. 2 nm)/ NPBX ( 5nm)/ DP Bi ( 30 ) / : % ( ) (30 )/ / ( ) , nm T PBi x Ir ppy 3 nm LiF Al Ir ppy 3 T PBi , ,Ir(ppy) 3 6% , ,9 10. 66 cd/A,(0.36,0.38) ; ( ) 3 , ,10 1.69 / , TPBi Ir ppy cd A ( 0.31, 0. 30) 6 %6. 3 : ; ; :T N383: A: 1000-3819( 2008)03-392-04 ( ) 3 Improved Efficiency of White OLED Using Doped Ir ppy in Electron-transporting Layer DING GuiyingJIANG WenlongWANG JinWANG LizhongWANG JingCHANG Xi (Colleg e of I nf or mat ion T echnology , J ilin N ormal Un iv er sity , S ip ing , J iL in , 136000,CH N ) Abstract: A white organic light - emitting devices WOLEDs with improved efficiency( ) using doped electron-transporting layer(ETL) have fabricated by vacuum deposition technique. The devices structure is IT O/ NPBX( 40nm)/ rubrene( 0. 2 nm) / NPBX( 5nm)/ DP Bi( 30nm)/ : % ( )3 ( 30 )/ / . % ( )3 . TPBi x Ir ppy nm LiF Al The x is the doping con