MOSFET表面势解析近似方法的改进 Refinement of an Analytical Approximation of the Surface Potential in MOSFETs.pdfVIP

v01．27 第27卷第7期 半 导 体 学 报 No．7 · 2006年7月 CHINEsEJoURNALoFSEMIcoNDUCToRS July，2006 Refinementofan theSurface of AnalyticalApproximation PotentialinMoSFETs” Lu Wu Jingxuel，HuangFengyⅣ，WangZhigon91，andWengan92 (1 210096，c柳，lⅡ) j邶m“把0，RF0E，c，勋“f_}l∞肼【mi忧脂打y，^陋可f增 100871，c柚ln) (2饥州m把D，肘fcroekcfro凡ics，n新增如1w阽ffy，＆玎跏g Abstract：Arefinementofan Ofthesurface MoSFETsis intro· analyticalapproximation potentialin proposedby a term．As tothecOnVentionaltreatmentwith between1nVandO．03mVin ducinghigh—order compared accuracy thecaseswithanoxidethicknessf啦=1～10nmandsubstrate cm一，this dopingconcentrationⅣa=1015～1018 method is an withinabOutinaUcases．This tonumericalsimulations，butdoesnot yieldsaccuracy 1pV cOmparable offmuch intheerrorcurveassociatedwith requiretrading efficiency．More spikes computation importantly，the thetraditionaltreatmentaree“minated． words：MoSFET；surface deVice Key potential；analyticalapprOximation；mOdeling EEACC：2560B；2570D；0290 CLC Document Artic