experiments on the release of cmos-micromachined metal layers实验的释放cmos-micromachined金属层.pdfVIP

Hindawi Publishing Corporation Journal of Sensors Volume 2010, Article ID 937301, 7 pages doi:10.1155/2010/937301 Research Article Experiments on the Release of CMOS-Micromachined Metal Layers ´ Daniel Fernandez, Jordi Ricart, and Jordi Madrenas Electronic Engineering Department, Technical University of Catalonia, UPC, C4 Building, Jordi Girona 1-3, 08034 Barcelona, Spain ´ Correspondence should be addressed to Daniel Fernandez, dfernan@ Received 14 December 2009; Accepted 4 March 2010 Academic Editor: Maria Tenje ´ Copyright © 2010 Daniel Fernandez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We present experimental results on the release of MEMS devices manufactured using the standard CMOS interconnection metal layers as structural elements and the insulating silicon dioxide as sacrificial layers. Experiments compare the release results of four different etching agents in a CMOS technology (hydrofluoric acid, ammonium fluoride, a mixture of acetic acid and ammonium fluoride, and hydrogen fluoride), describe various phenomena found during the etching process, and show the release results of multilayer structures. 1. Introduction (ii) intra-CMOS: when the MEMS is manufactured between the regular fabrication steps of the CMOS During the last decades, many efforts in microelectronics