evaluation of cds interfacial layers in zno nanowirepoly(3-hexylthiophene) solar cells评价光盘界面层氧化锌nanowirepoly(3-hexylthiophene)太阳能电池.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2012, Article ID 192456, 8 pages doi:10.1155/2012/192456 Research Article Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells John W. Murphy, Israel Mejia, Bruce E. Gnade, and Manuel A. Quevedo-Lopez The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080-3021, USA Correspondence should be addressed to John W. Murphy, johnwmurphy@ Received 26 February 2012; Accepted 17 April 2012 Academic Editor: Sevan P. Davtyan Copyright © 2012 John W. Murphy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We prepare ZnO:poly(3-hexylthiophene) (P3HT) thin-film solar cells and ZnO nanowire:P3HT nanostructured solar cells and evaluate the effect of adding an interfacial layer between the ZnO and P3HT as a function of the nanowire height. We evaluate several different interlayers of CdS deposited, using two different chemical bath deposition (CBD) recipes. The height of the nanowire array is varied from a bilayer device with no nanowires up to arrays with a height of 2 μm. We find that achieving a conformal coating of the ZnO with the interfacial layer is critical to improve device performance and that CBD can be used to grow conformal films on nonuniform surfaces. 1. Introduction ZnO nanowires with intrinsic a-Si, as well as p-i-n coaxial diodes deposited on top of a conductive Al-doped ZnO Zinc oxide is an exciting semiconductor material for a variety