dynamic deformation electron-phonon interaction in disordered bulk semiconductor动态变形在无序大部分半导体电子声子相互作用.pdfVIP

World Journal of Condensed Matter Physics, 2012, 2, 42-46 /10.4236/wjcmp.2012.21007 Published Online February 2012 (http://www.SciRP.org/journal/wjcmp) Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor 1* 1 2 3 Pushpendra Tripathi , Syed Sikandar Zulqarnyn Ashraf , Syed Tahir Hasan , Ami Chand Sharma 1Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Zakir Husain College of Engineering Technology, Aligarh Muslim University, Aligarh, India; 2Physics Department, Shibli National Post Graduate College, Azamgarh, India; 3Physics Department, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara, India. * Email: ptrip71@ Received September 28th, 2011; revised November 4th, 2011; accepted November 12th, 2011 ABSTRACT We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconduct- ing GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor  from the earlier reported temperature power law dependence result T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the depend- ence of scattering rate on the mean free path from the static screening result. Keywords: Electron-Phonon Scattering Rate; Dynamic Screening; Deformation Potential 1. Introduction fore, the problem is commonly divided into two special cases: the pure and impure (or diffusive) lim