effect of etching time on optical and thermal properties of p-type porous silicon prepared by electrical anodisation method腐蚀时间对p型多孔硅的光学和热性能由电子阳极氧化方法.pdfVIP

Hindawi Publishing Corporation Advances in Optical Technologies Volume 2012, Article ID 581743, 9 pages doi:10.1155/2012/581743 Research Article Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method Kasra Behzad, Wan Mahmood Mat Yunus, Zainal Abidin Talib, Azmi Zakaria, Afarin Bahrami, and Esmaeil Shahriari Department of Physics, Faculty of Science, Universiti Putra Malaysia, Selangor, 43400 Serdang, Malaysia Correspondence should be addressed to Wan Mahmood Mat Yunus, mahmood@.my Received 23 August 2011; Revised 12 October 2011; Accepted 26 October 2011 Academic Editor: Ci-Ling Pan Copyright © 2012 Kasra Behzad et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples. 1. Introduction carriers in narrow crystalline