algangan hemt势垒层厚度影响的模拟及优化 simulation and optimization of the barrier layer thickness of algangan hemts.pdfVIP

a技术nd 薯器D件evic与es AIGaN／GaN HEMT势垒层厚度影H向的模拟及优化 晓珂8， 刘 岩8 申艳芬8，林兆军6，李惠军8，张明华8，魏 (山东大学 信息科学与工程学院；b．物理微电子学院，济南 250100) 证等工作。使用TCAD软件完成了该器件直流特性及微波特性等性能的模拟。建立该器件的极 化效应模型是本项研究的重点。完成了对异质结条件下诸多模型参数的筛选及修正，得到了符合 理论的模拟结果。器件特性的验证与优化基于势垒层厚度h的变化展开，研究结果显示：漏极电 流随h值的增加而增加，当h值超过40nm时，因二维电子气浓度上升缓慢而使漏极电流趋于 饱和；跨导随h值的减小而增大，h每降低10nm，跨导约增大37mS／ram；势垒层厚度对高频 特性的影响较小。 Simulationand oftheBarrier Optimization Thicknessof HEMTs Layer AIGaN／GaN Yan8 ShenYanfen8，Lin Xiaohe，Liu Zhaojun6，LiHuijun8，ZhangMinghua8，Wei (a．School Scienceand and ofInformation Engineering；b．SchoolofPhysics 2501 00，China) Microelectronics，ShandongUniversity，J{nan electron Abstract：ThestructureofA1GaN／GaN transistors(HEMTs)and design high mobility verificationofthedevice characteristicswere simulationsoftheDCcha- physical completed．The andmicrowave werefinishedTCADsoftware．Themain ofthere— racteristics properties by point searchiStoestablishthe effectmodelofthedevice．Thechoiceandmodificationof polarization model for structureswere simulationresultis many parametersheterojunction completed．The ofthe consistentwiththetheoreticalvalue．Theverificationand devicecharacteris— optimization