原创力文档single-ion implantation for the development of si-based mosfet devices with quantum functionalities单离子注入的发展si-based mosfet器件和量子功能.pdfVIP
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single-ion implantation for the development of si-based mosfet devices with quantum functionalities单离子注入的发展si-based mosfet器件和量子功能
Hindawi Publishing Corporation
Advances in Materials Science and Engineering
Volume 2012, Article ID 272694, 10 pages
doi:10.1155/2012/272694
Review Article
Single-Ion Implantation for the Development of Si-Based
MOSFET Devices with Quantum Functionalities
Jeffrey C. McCallum, David N. Jamieson, Changyi Yang, Andrew D. Alves, Brett C. Johnson,
Toby Hopf, Samuel C. Thompson, and Jessica A. van Donkelaar
Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of Melbourne,
Melbourne, VIC 3010,
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