the effect of deposition temperature of pb(zr,ti)o3(pzt)thin films with thicknesses of around 100 nm on the piezoelectric response for nano storage applications沉积温度的影响pb(锆、钛)o3(压电)薄膜厚度约100纳米压电纳米存储应用程序的响应.pdfVIP

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the effect of deposition temperature of pb(zr,ti)o3(pzt)thin films with thicknesses of around 100 nm on the piezoelectric response for nano storage applications沉积温度的影响pb(锆、钛)o3(压电)薄膜厚度约100纳米压电纳米存储应用程序的响应.pdf

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the effect of deposition temperature of pb(zr,ti)o3(pzt)thin films with thicknesses of around 100 nm on the piezoelectric response for nano storage applications沉积温度的影响pb(锆、钛)o3(压电)薄膜厚度约100纳米压电纳米存储应用程序的响应

World Journal of Condensed Matter Physics, 2012, 2, 51-56 51 /10.4236/wjcmp.2012.22009 Published Online May 2012 (http://www.SciRP.org/journal/wjcmp) The Effect of Deposition Temperature of Pb(Zr,Ti)O3 (PZT) Thin Films with Thicknesses of around 100 nm on the Piezoelectric Response for Nano Storage Applications Han Wook Song Center for Mass and Related Quantities, Division of Physical Metrology, Korea Research Institute of Standards and Science, Daejeon, South Korea. Email: hanugi16@kriss.re.kr Received May 30th, 2011; revised June 25th, 2011; accepted July 5th, 2011 ABSTRACT We investigated the effect of the deposition temperature of PZT thin films with thicknesses of around 100 nm on the piezoelectric response using an atomic force microscope (AFM). The preferred orientation of the PZT thin film was changed from (001) to (110) as the deposition temperature increased. The surface roughness of PZT thin films de- creased with the increase of deposition temperature. The maximum amplitude of the piezoelectric response of PZT thin films decreased till the deposition temperature increased to 350˚C. This tendency seems to be due to the change of the preferred orientation form (001) to (110). At over 450˚C, this maximum value decreased due to both the increase of the surface roughness and the degradation of the crystallinity. Keywords: PZT; AFM; Deposition Temperature; Orientation; Piezoelectric Response 1. Introduction a density of tens of Gbits/cm2 . Therefore, it is important to decrease the critical thickness over which the PZT Pb(Zr,Ti)O (PZT) is one of most promising ferroelectric 3 showed piezoelectric