non-linearity in wide dynamic range cmos image sensors utilizing a partial charge transfer technique非线性的宽动态范围cmos图像传感器利用部分电荷转移技术.pdfVIP

Sensors 2009, 9, 9452-9467; doi:10.3390/ OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Non-Linearity in Wide Dynamic Range CMOS Image Sensors Utilizing a Partial Charge Transfer Technique Suhaidi Shafie 1,*, Shoji Kawahito 2, Izhal Abdul Halin 1 and Wan Zuha Wan Hasan 1 1 Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia; E-Mails: izhal@.my (I.A.H.); wanz@.my (W.Z.W.H.) 2 Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan; E-Mail: kawahito@idl.rie.shizuoka.ac.jp * Author to whom correspondence should be addressed; E-Mail: suhaidi@.my; Tel.: +603-8946-6307; Fax: +603-8946-6327. Received: 22 September 2009; in revised form: 27 October 2009 / Accepted: 4 November 2009 / Published: 26 November 2009 Abstract: The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, whi