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Sensors 2008, 8, 4350-4364; DOI: 10.3390/s8074350 OPEN ACCESS sensors ISSN 1424-8220 /sensors Article The Image Transceiver Device: Studies of Improved Physical Design Yitzhak David 1 and Uzi Efron 2,1, * 1 Department of Electrical Engineering, Holon Institute of Technology, Holon, Israel; E-mail: isak@hit.ac.il 2 Department of Electro-optical Engineering, Ben Gurion University, Beer-Sheva, Israel * Author to whom correspondence should be addressed; E-mail : efron@bgu.ac.il Received: 26 June 2008; in revised form: 17 July 2008 / Accepted: 21 July 2008 / Published: 25 July 2008 Abstract: The Image Transceiver Device (ITD) design is based on combining LCOS micro-display, image processing tools and back illuminated APS imager in single CMOS chip [1]. The device is under development for Head-Mounted Display applications in augmented and virtual reality systems. The main issues with the present design are a high crosstalk of the backside imager and the need to shield the pixel circuitry from the photo- charges generated in the silicon substrate. In this publication we present a modified, “deep p-well” ITD pixel design, which provides a significantly reduced crosstalk level, as well as an effective shielding of photo-charges for the pixel circuitry. The simulation performed using Silvaco software [ATLAS Silicon Device Simulator, Ray Trace and Light Absorption programs, Silvaco International, 1998] shows that the new