硅薄膜的制备及光学性能研究（Preparation and optical properties of silicon thin films）.doc

硅薄膜的制备及光学性能研究（Preparation and optical properties of silicon thin films） Preparation and optical properties of silicon thin films Abstract: a series of amorphous silicon films were prepared by magnetron sputtering, and the optical properties of the films were investigated. The results show that the growth rate of silicon film increases linearly with the increase of sputtering power. IR spectra showed that silicon thin film contains a small amount of H, and exists in the form of SiH2, with the increase of sputtering power, the H content in the films increases gradually, while the optical energy gap gradually increased from 1.58eV to 1.74eV. Photoluminescence experiments show that there are two luminescence peaks at 380nm and 730nm, and the peak positions of silicon films are almost unchanged, while the intensity of luminescence is related to the content of silicon oxide in silicon films. Keywords: magnetron sputtering, silicon films, optical bandgap, photoluminescence 0 Introduction As a kind of solar cell material, silicon thin film has many advantages, such as little material, low cost, large area production on low cost substrate such as glass and plastic. It has been paid more and more attention by researchers. According to the structure, silicon films are usually divided into polysilicon, amorphous silicon, microcrystalline silicon and nanocrystalline silicon film. At present, the preparation methods of silicon thin film is the most common plasma enhanced chemical vapor deposition (PECVD) method and magnetron sputtering technology is gradually attention, researchers have been using the method of pulse magnetron sputtering in high temperature conditions prepared excellent optical and electrical properties of amorphous silicon thin film [1]. Preparation of silicon thin film by magnetron sputtering technology, mainly by changing the negative bias voltage, deposition temperature, reaction pressure, introducing hydrogen flow rate, sputtering power and other technologic