功率肖特基二极管静电损伤分析-失效分析与预防.pdfVIP

2010 8 August, 2010 5 3 Vol. 5, No. 3 , ( 中国空间技术研究院电子元器件可靠性中心, 北京 100029) [ ] ( ESD), , + : SiO , SiO 2 2 , ( Si) SiO , 2 ESD(MOS), [] ; ; [] TN312. 4 [] A do:i 10. 3969/.j issn. 1673-6214. 2010. 03. 009 [] 1673-6214( 2010) 03-0168-04 Ana ly sis of Schottky R ectifier D am aged E lectro-static D ischarge GONG X in, ZHANG Y an-wei ( Ch inese A cademy of Sp ace Tech no logy, B e ij ing 100029, Ch ina) A b stract: The cause of the high electro-static d ischarge ( ESD) sensitivity of schottky rectifierw as stud ied based on failure ana-l ysis of ESD damaged schottky rectifier. The resu lts show since a SiO layer as am ask for + diffusion is necessary to be form ed, 2 som e SiO m ay rem ain at the interface betw een the Sim aterial and nextm etal layer for all k inds of reasons such asm inor defects 2 on the Si surface and etching anom aly. A s a resu lt, a structure likem etal oxide sem iconductor(MOS) capacitorwh ich is sensitive to ESD w as introduced to the schottky rectifier, and the sensitivity of Schottky Rectifier largely increased. The resu lt is very use- ful to them anufacture, application and failure analysis of schottky rectifiers. K ey w ords: schottky rectifier; failure analysis; electro-static d ischarge , 0