MEMS原理-02Optical Lithography.ppt

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * DI Water Rinse Spindle To vacuum pump Chuck Wafer DI water dispenser nozzle Spin Dry Spindle To vacuum pump Chuck Wafer Ready For Hard Bake Spindle Chuck Wafer Development Developer solvent dissolves the softened part of photoresist Transfer the pattern from mask or reticle to photoresist Three basic steps: Development Rinse Dry Development PR PR PR PR Substrate Substrate Substrate Substrate Film Film Film Film Mask Exposure Development Etching PR Coating Development Profiles Developer Solution +PR normally uses weak base solution The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH). TMAH: 羟化四甲铵 Developer Solutions Positive PR Negative PR Developer TMAH Xylene Rinse DI Water n-Butylacetate n-乙酸丁酯 Hard Bake Conditions Hot plate is commonly used Can be performed in a oven after inspection Hard bake temperature: 100 to 130 ?C Baking time is about 1 to 2 minutes Hard bake temperature normally is higher than the soft bake temperature for the same kind of photoresist Photoresist Flow PR Substrate Substrate Normal Baking Over Baking Over baking can causes too much PR flow, which affects photolithography resolution. PR Etching Process Strip PR Rinse, Dry, Save Photolithography Requirements High Resolution PR High PR Sensitivity PR Precision Alignment Machine Precise Process Parameters Control Low Defect Density ?ultra-clean room Future Trends of Photolithography Smaller feature size Higher resolution Reducing wavelength Phase-shift mask Future Trends Even shorter wavelength 193 nm 157 nm Silicate glass absorbs UV light when l 180 nm CaF2 optical system Next generation lithography (NGL) Extreme UV (EUV) Electron Beam X-ray (?) Summary Photolithography: temporary patterning process Most critical process steps in IC processing Requirement: high resolution, low