利用新设计磨具对铌酸锂晶片的减薄及减薄后的测试.PDFVIP

第28卷 第6期 总第128期 Vol28 No6 Journal of Materials Science Engineering Dec. 2010 :2010) , , , , ( ,, 030051) , 200 ! 100N , 40 , 1∀ 1, , , , 7 , ; 118 , ; ; ; ; ; n : TN405 :A c . Thinning of Lithium Niobate Wafers with a Novel esigned Lapping Tool and Measurements m o U Wenlong, LIANGTing, XUE Chenyang, TANG Jianjun, YE Ting c (Key Laboratory of Instrumentation Science ynamic Measurement, North University of China, Ministry of Education, . China; National Key Laboratory forElectronicMeasurement Technology, Taiyuan 030051, China) m Abstract Because of the pyroelectric effects, infrared sensors made of lithium niobate have attracted much attention for its potential applications. A lithium niobate wafer and a silicon substrate were bonded p together at 200# under a pressure of 100N. Lithium niobate had been thinned to 40 microns using a novel s . designed lapping tool. T he abrasive contains water and corundum with a ratio of 1 ∀ 1. T he bonding and thinning process of lithium niobate was studied. The residual stress was analyzed by Raman spectroscopy. w Sample surface roughness was tested by atomic force microscopy. Maximum difference of wafer thickness is 7 microns. After grinding, surface roughness of the wafer is 118nm. Lithi