中兴大学电机所博士班元件物理资格考题库.docVIP

中興大學電機所博士班元件物理資格考題庫 ? 題目出處: 1. Semiconductor Devices physics and technology, S.M. Sze 2. An Introduction to Semiconductor Devices, Donald Neamen? ? ? Part 1: Semiconductor Physics (1) If the lattice constant of silicon is 5.43?, calculate (a) the distance from the center of one silicon atom to the center of its nearest neighbor, (b) the number density of silicon atoms(#/cm3), and (c) the mass density (grams/cm3) of silicon. (2) Consider the (100), (110), (111) plane in silicon. (a)Which plane has the highest surface density of atoms? What is that density? (b)Which plane has the smallest surface density of atoms? What is that density? (3) A one-dimensional infinite potential well with a width of 12 ? contains an electron. (a)Calculate the first two energy levels that the electron may occupy. (b)If an electron drops from the second energy level to the first, what is the wavelength of a photon that might be emitted? (4) Consider a three-dimensional infinite potential well. The potential function is given by V(x) = 0 for 0 x a, 0 y a, 0 z a, and V(x) = ∞ elsewhere. Start with Schr?dinger’s wave equation, use the separation of variables technique, and show that the energy is quantized and is given by Where nx = 1,2,3…, ny = 1,2,3…., nz = 1,2,3… (5) (a) Estimate the tunneling probability of particle with an effective mass of 0.067m0 (an electron in gallium arsenide), where m0 is the mass of an electron, tunneling through a rectangular potential barrier of height V0 = 0.8 eV and width 15?. The particle kinetic energy is 0.20 eV. (b) Repeat part (a) if the effective mass of the particle is 1.08m0 (an electron in silicon). (6) Show that the probability of an energy state being occupied by ΔE above the Fermi energy is the same as the probability of a state being empty ΔE below the Fermi level. (7) Assume the Fermi energy level is exactly in the center of the bandgap energy of a semiconductor at T = 300K. (a) Calculate the probability that energy state a