半导体材料与器件（林仕伟）第二讲 载流子输运.pptVIP

费米能级 EF 的确定 Carrier concentration at high temperature载流子浓度与温度的关系 Nc NV ?T3/2 ni increases rapidly with T At high T, ni ? dopant conc., devices no longer work as they should Chapter 2 Carrier Action 载流子输运 Drift 漂移 Diffusion 扩散 Generation and Recombination 产生-复合 Carrier Injection and Minority Carrier Lifetimes 载流子注入和少子寿命 Continuity Equations 连续性方程 Drift 漂移 In the presence of an electric field, electrons or holes will move. Electron moves in the opposite direction to that of the electric field, owing to it negative charge (-q), while hole moves in the direction of the electric field. Drift (cont.) Velocity saturation Drift (cont.) Drift (cont.) Carrier mobility 载流子迁移率（P54-58）At low electric field (2 x 104 V/cm) ? = ?? (drift velocity ? e-field) Drift (cont.) Diffusion 扩散 Diffusion (cont.) Diffusion (cont.) Diffusion (cont.) For low concentration gradient, the particle diffusion rate is proportional to the concentration gradient. The current density arising from diffusion are: Electron diffusion current density Hole diffusion current density Diffusion coefficient 扩散系数 Diffusion coefficient, Dn or Dp, is a measure of the ease of carrier diffusion motion in a medium. On the other hand, mobility, ?n or ?p , is a measure of the ease of carrier in a medium. It is therefore not surprising that the two quantities are related by the Einstein Relation 爱因斯坦关系式 Drift and Diffusion If both an electric field and a concentration gradient are present, the carriers will drift and diffuse. Generation 产生 At T O K, owing to thermal excitation, some electrons manage to ‘jump’ from the valence band (VB) to the conduction band (CB) and this leads to electron-hole pairs (EHPs) being generated. Generation (cont.) At equilibrium, electron concentration, n, and hole concentration, p, are not changed, i.e. ? which means annihilation mechanism （湮灭机制）exists that returns electrons from CB to VB to recombine with holes there. Recombination 复