拉扎维授课课件 Ch1-8.ppt

CH1 Why Microelectronics? CH 6 Physics of MOS Transistors Channel Potential Variation Since there’s a channel resistance between drain and source, and if drain is biased higher than the source, channel potential increases from source to drain, and the potential between gate and channel will decrease from source to drain. CH5 Bipolar Amplifiers Emitter Follower (Common Collector Amplifier) CH5 Bipolar Amplifiers Emitter Follower Core When the input is increased by ?V, output is also increased by an amount that is less than ?V due to the increase in collector current and hence the increase in potential drop across RE. However the absolute values of input and output differ by a VBE. CH5 Bipolar Amplifiers Small-Signal Model of Emitter Follower As shown above, the voltage gain is less than unity and positive. CH5 Bipolar Amplifiers Unity-Gain Emitter Follower The voltage gain is unity because a constant collector current (= I1) results in a constant VBE, and hence Vout follows Vin exactly. CH5 Bipolar Amplifiers Analysis of Emitter Follower as a Voltage Divider CH5 Bipolar Amplifiers Emitter Follower with Source Resistance CH5 Bipolar Amplifiers Input Impedance of Emitter Follower The input impedance of emitter follower is exactly the same as that of CE stage with emitter degeneration. This is not surprising because the input impedance of CE with emitter degeneration does not depend on the collector resistance. CH5 Bipolar Amplifiers Emitter Follower as Buffer Since the emitter follower increases the load resistance to a much higher value, it is suited as a buffer between a CE stage and a heavy load resistance to alleviate the problem of gain degradation. CH5 Bipolar Amplifiers Output Impedance of Emitter Follower Emitter follower lowers the source impedance by a factor of ?+1 improved driving capability. CH5 Bipolar Amplifiers Emitter Follower with Early Effect Since rO is in parallel with RE, its effect can be easily incorporated into voltage gain and inpu