铸造多晶硅不同区域性能的研究.doc

铸造多晶硅不同区域性能的研究 摘 要 近年来,由于低成本、低耗能和少污染的优势,铸造多晶硅成为主要的光伏材料之一,越来越受到人们的广泛关注。深入地研究材料中杂质有利于生产出高成品率的铸造多晶硅锭,降低铸造多晶硅太阳能电池的制造成本,同时也是制备高效率铸造多晶硅太阳能电池的前提。 本文利用微波光电导衰减仪(μ—PCD),以及红外探伤（IR Imaging）等测试手段,对铸造多晶硅中的杂质及缺陷以及少子寿命的分布特征进行了研究。采用μ—PCD测得了沿硅锭生长方向(从底部至顶部)的少子寿命分布图。结果显示距离硅锭底部3～4cm,以及顶部3cm的范围内存在一个少子寿命值过低的区域,而硅锭中间区域少子寿命值较高且分布均匀。研究结果表明硅锭中存在的高浓度的氧、铁等杂质为影响其少子寿命值的关键因素。多晶硅锭中经常出现硬质夹杂颗粒,严重影响线切割硅片的表面质量,严重时造成硅片切割生产中断线。结果显示硅锭的顶表面附近夹杂高度富集。 关键词: 铸造多晶硅,少子寿命,铁,氧, 夹杂 The Property of Different Regions in Cast Multi-Crystalline Silicon ABSTRACT Recently,due to the superiority of low cost, low energy consumption and less pollution,cast multicrystalline silicon has obtained more and more attention for being one of the main photovohaic materials. Understanding the properties of these impurities of mc-Si materials could help us find the way to reduce the cost of mc-Si solar cells and produce high quality mc-Si ingots． In this thesis,the properties of impurities and defects in mc-si as well as their impacts on the minority carrier lifetime in mc-si ingots have been studied by means of Microwave Photo Conductive Decay,and IR Imaging techniques.The minority carrier lifetime mapping along the multicrystalline ingot was obtained by μ-PCD．The lifetime measurements exhibit a degraded regions with the width of the order of 3-4 cenimeters at the bottom and about 3cm at the top of the ingot,whiile a large uniform with high 1ifetime zone exist in the central position．The high concentration of impurities such as iron and oxygen , which is believed to be responsible for the lifetime reduction in the two sides of the ingot. The inclusion particles severely affect surface quality of multi-crystalline silicon wafers,and threaten the wire cutting process of the wafer production from multi-crystalline silicon ingot．Because they may cause wire broken in the cutting processes. The inclusions are highiy concentrated in the top layers of the ingot. KEY WORDS: multicrystalline silicon,nority carrier lifetime,ron ,oxy