Lesson 05 Transistor 电子技术专业英语教程[冯新宇主编][电子教案].ppt

《电子技术专业英语教程》 Lesson 5 Transistor Lesson 5 Transistor  Terminology Bipolar junction transistor Field-effect transistor Transistor characteristics History of the transistor Terminology 半导体材料组成了双极型晶体管的三个区。第一种类型叫做p-n-p晶体管，结构是两个p型材料间夹着一层薄的n型材料，类似于三明治结构。 The two p-type material regions of the p-n-p transistor are called the emitter and collector and the n-type material is called the base. 在p-n-p 晶体管中，两个p型材料区叫做发射区和集电区，n型材料区叫做基区。 Bipolar junction transistor The only functional difference between a p-n-p transistor and an n-p-n transistor is the proper biasing (polarity) of the junctions when operating. For any given state of operation, the current directions and voltage polarities for each type of transistor are exactly opposite each other. p-n-p管和 n-p-n管之间唯一的本质区别在于工作时结的偏置(极性)不同。在任意给定的工作模式下，两种晶体管的电流方向和电压极性正好相反。 A FET has three terminals，a source, a drain and a gate. The semiconductor region between source and drain is called a channel and its conductivity is controlled by the potential of the gate terminal. 场效应晶体管有三个端：源、漏、栅。源和漏之间的半导体区域称为沟道，导电性是由栅极电压决定。 There are three ways of connecting a transistor, depending on the use to which it is being put. The ways are classified by the electrode that is common to both the input and the output. They are called: (a) common-base configuration (b) common-emitter configuration (c) common-collector configuration 晶体管的连接方式有三种，取决于它使用时怎样放置。通常以使用的输入极和输出极分类。它们分别是：(a)共基极 (b)共发射极 (c)共集电极 the first type of solid-state electronic transistor was made by researchers John Bardeen and Walter Houser Brattain at Bell Laboratories in December 1947. The grown-junction transistor was the first type of bipolar junction transistor made,whichwas invented by William Shockley at Bell Labs on June 23, 1948 1950年：威廉·邵克雷开发出双极晶体管（Bipolar Junction Transistor），这是现在通行的标准的晶体管。 1953年：第一个采用晶体管的商业化设备投入市场，即助听器。 1954年10月18日：第一台晶体管收音机Regency TR1投入市场，仅包含4只锗晶体管。　　 Outline Brief introduction (para.1) Bipolar junction transistor (para.2, 3, 4) Fiel