Morphology and Composition of Selected High k Materials and their relevance to dielectric properties of thin films英文文献.pdfVIP

Journal of The Electrochemical Society, 155 5 G97-G114 2008 G97 0013-4651/2008/1555/G97/18/$23.00 © The Electrochemical Society Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films J. Dąbrowski,a,z G. Lippert,a,* L. Oberbeck,b U. Schröder,b,* I. Costina,a G. Łupina,a M. Ratzke,b,c P. Zaumseil,a and H.-J. Müssiga aIHP, 15236 Frankfurt (Oder), Germany b Qimonda Dresden GmbH Co. OHG, 01099 Dresden, Germany cLS Experimentalphysik II, Brandenburgische Technische Universität Cottbus, 03046 Cottbus, Germany, and JointLab IHP/BTU, 03046 Cottbus, Germany We discuss some of the issues associated with the relation between the leakage current and the dielectric constant on the one hand, and the crystallographic structure and the chemical composition of the film on the other. Our focus is on dielectrics containing Pr oxides. Starting with the binary Pr O , we investigate electronic properties and formation energies of point defects as revealed by 2 3 ab initio calculations and we attempt to associate this data with the experimental information on the influence of processing on the dielectric quality of the film. We then consider Pr silicates on Si for metal-oxide-semiconductor field effect transistors and PrxAl2−x O3 on TiN for metal–insulator–metal front-end applications. In the latter case, annealing a