太赫兹CMOS场效应管模型及实验分析.docVIP

太赫兹CMOS场效应管模型及实验分析 张镜水孔令琴董立泉赵跃进 北京理工大学光电学院 针对商业CMOS （互补金属氧化物半导体）场效应管模型在高频下易失效的问题， 运用ADS软件构建了基于经典动力学理论的非线性RCL传输线模型，并结合实测 数据说明丫本文模型的精准性及太赫兹波段场效应管的工作原理。构建了基于经 典动力学理论的非线性RCL传输线模型仿真系统，并将其与商业模型仿真结果 进行对比，分析了在太赫兹波段本文模型与商业模型的区别。测试了现有场效应 管探测器的频率响应，并对实测数据与两种模型仿真数据进行对比，说明木文 模型提高了预测精度。最后，结合3o原则分析了场效应管沟道尺汴对载流子散 射效应的影响，以及场效应管进入弹道工作模式的条件。实验结果表明：本文模 型与商业模型的区别主要在于模型中是否存在电感部分，该部分可作为场效应 管沟道中载流子动量是否守恒及散射效应是否可以忽略的表征参数。相较于商业 模型，木文模型对探测器最佳频率工作点的预测精准度可提高0.3%，对探测器 带宽的预测精准度可提高约10%。该项研究为CMOS场效应管模型的精确建立及 仿真分析提供丫良好基础。 关键词： 太赫兹CMOS场效应管;场效应管探测器;场效应管模型;散射效应; mercial CMOS (Complementary Metal Oxide Semiconductor) transistor model will lose the accuracy in a high frequency range, a nonlinear RCL transmission line model based on classic kinetic theory was developed with ADS software. The accuracy of proposed model and the working principle of the CMOS in THz range were discussed based on measured data. A simulation system for the nonlinear RCL transmission line model was constructed, and simulation results were compared with that of commercial model and the difference between the proposed model and the commercial CMOS model in THz range was analyzed. Then, the frequency responses of current CMOS transi stors were tested, tested data were compared wi th those of the simulation data from the two kinds of models. The results demonstrate that the proposed model has been improved the prediction accuracy. Finally, the effects of channel size of transistor on the scattering effect of carriers were analyzed and conditions of transistor to turn on ballistic mode were given with 3 o rules. The results show that the difference between the two models mainly focuses on the inductance part, which could repre-sent the momentum conservation of carriers in transistor channel and if the scattering effect could be neglected or not. Compared with the commercial model, the prediction accuracy for the optimal resonant frequency of a detector has improved by 0. 3%, and that for the optimal working bandwidth of the detector